This course focuses on circuit models and amplifier frequency response, op-amps, difference amplifier, voltage-to-current converter, slew rate, full-power bandwidth, common-mode rejection, frequency response of closed-loop amplifier, gain-bandwidth product rule, diodes, limiters, clamps and semiconductor physics. Other topics include Bipolar Junction Transistors; small-signal models, cut-off, saturation and active regions; common emitter, common base and emitter-follower amplifier configurations; Field-Effect Transistors (MOSFET and JFET); biasing; small-signal models; common-source and common gate amplifiers; and integrated circuit MOS amplifiers. The alternate-week laboratory experiments on OP-AMP applications, BJT biasing, large signal operation and FET characteristics. The course studies design and analysis of operational amplifiers; small-signal bipolar junction transistor and field-effect transistor amplifiers; diode circuits; differential pair amplifiers and semiconductor device- physics fundamentals. | Prerequisites for Brooklyn Engineering Students: EE-UY 2024 or EE-UY 2004 (C- or better) and PH-UY 2023 | Prerequisites for Abu Dhabi Students: ENGR-AD 214 and SCIEN-AD 110. | Prerequisites for Shanghai Students: EENG-SHU 251 (C- or better) and PHYS-SHU 93 or CCSC-SHU 51. ABET competencies a, b, c, e, k.

Elect. Engineering – ECE UGRD (Undergraduate)
4 credits – 14 Weeks

Sections (Fall 2025)

ECE-UY 3114-000 (3916)

ECE-UY 3114-000 (3917)

ECE-UY 3114-000 (3918)

ECE-UY 3114-000 (3915)

ECE-UY 3114-000 (3919)
09/02/2025 – 12/11/2025 Mon,Wed
4:00 PM – 5:00 PM (Late afternoon)
at Brooklyn Campus
Instructed by Das, Nirod